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Consider a GaAs pn junction, in thermal equilibrium at 300 K, u... | Filo

Consider a GaAs pn junction, in thermal equilibrium at 300 K, u... | Filo

Consider a uniformly doped GaAs pn junction at T=300 K. The junction capacitance at zero bias is Cj(0) and the junction capacitance with a 10-V reverse-biased voltage is Cj(10). The ratio of the capacitances is (Cj(0))/(Cj(10))=3.13 Also under reverse bias, the space charge width into the p region is 0.2 of the total space charge width. Determine ( a) Vb i and (b) Na, Nd | Numerade

Consider a uniformly doped GaAs pn junction at T=300 K. The junction capacitance at zero bias is Cj(0) and the junction capacitance with a 10-V reverse-biased voltage is Cj(10). The ratio of the capacitances is (Cj(0))/(Cj(10))=3.13 Also under reverse bias, the space charge width into the p region is 0.2 of the total space charge width. Determine ( a) Vb i and (b) Na, Nd | Numerade

$Consider a pn junction GaAs LED. Assume that photons are generated uniformly in all directions in a plane perpendicular to the junction at a distance of 0.50 μm from the surface. ( a ) Taking into account total internal reflection, calculate the fraction of photons that have the potential of being emitted from the semiconductor. ( b ) Using the results of part (a) and including Fresnel loss, determine the fraction of generated photons that will be emitted from the semiconductor into air (neglect$

Consider a pn junction GaAs LED. Assume that photons are generated uniformly in all directions in a plane perpendicular to the junction at a distance of 0.50 μm from the surface. ( a ) Taking into account total internal reflection, calculate the fraction of photons that have the potential of being emitted from the semiconductor. ( b ) Using the results of part (a) and including Fresnel loss, determine the fraction of generated photons that will be emitted from the semiconductor into air (neglect

SOLVED:Consider an n-GaAs-p-AlGaAs heterojunction in which the bandgap offsets are ΔEc=0.3 eV and ΔEv=0.15 eV. Discuss the difference in the expected electron and hole currents when the junction is forward biased.

SOLVED:Consider an n-GaAs-p-AlGaAs heterojunction in which the bandgap offsets are ΔEc=0.3 eV and ΔEv=0.15 eV. Discuss the difference in the expected electron and hole currents when the junction is forward biased.

Sketch the energy-band diagrams of an abrupt Al0.3 Ga0.7 As-GaAs heterojunction for: (a) N ^ -AlGaAs, intrinsic GaAs, (b) N ^ - AlGaAs, p-GaAs, and (. c) P^ -AlGaAs, n^ - GaAs. Assume Eg=1.85 eV for Al03 Ga0.7 As and assume ΔEc=(2)/(3) ΔEg | Numerade

Sketch the energy-band diagrams of an abrupt Al0.3 Ga0.7 As-GaAs heterojunction for: (a) N ^ -AlGaAs, intrinsic GaAs, (b) N ^ - AlGaAs, p-GaAs, and (. c) P^ -AlGaAs, n^ - GaAs. Assume Eg=1.85 eV for Al03 Ga0.7 As and assume ΔEc=(2)/(3) ΔEg | Numerade

Consider a GaAs pn junction with doping concentrations Na=5 ×10^16 cm^-3 and Nd=10^16 cm^-3. The junction cross-sectional area is A=10^-3 cm^2 and the applied forward-bias voltage is Va=1.10 V. Calculate the (a) minority electron diffusion current at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode. | Numerade

Consider a GaAs pn junction with doping concentrations Na=5 ×10^16 cm^-3 and Nd=10^16 cm^-3. The junction cross-sectional area is A=10^-3 cm^2 and the applied forward-bias voltage is Va=1.10 V. Calculate the (a) minority electron diffusion current at the edge of the space charge region, (b) minority hole diffusion current at the edge of the space charge region, and (c) total current in the pn junction diode. | Numerade

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