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  1. Ultra-wide bandgap semiconductor Ga2O3 power diodes - Nature

  2. Ultra-Wide Band Gap Ga2O3-on-SiC MOSFETs - ACS …

    Jan 26, 2023 · Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga 2 O 3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today’s …

  3. (Ultra)wide-bandgap semiconductors for electric vehicles

  4. Design of 2–16 GHz Non-Uniform Distributed GaN …

    Nov 1, 2022 · In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 ÎĽm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented.

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  6. (PDF) Ultra-wide bandgap semiconductor Ga2O3 …

    Jul 6, 2022 · Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can...

  7. GaN vs SiC: A look at two popular WBG semiconductors in power

  8. High Power Wide-Band GaN Amplifiers: Industrial Design and …