Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga2O3 material limit. Major obstacles are high breakdown voltage requi...

Ultra-wide band gap semiconductor devices based on β-phase gallium oxide (Ga2O3) offer the potential to achieve higher switching performance and efficiency and lower manufacturing cost than that of today's wide band gap power electronics. However, the most critical challenge to the commercialization...

Use of the vanadium-compensated semi-insulating (VCSI) 4H-SiC photoconductive semiconductor switch (PCSS) for the generation of an ultra-wideband (UWB) microwave with MHz tunable re-frequency is demonstrated. To evaluate the impact of device architectures on performance, a 4H-SiC-based photoconducti...