Jan 17, 2022 · Poly-Si gates have replaced metal gates in metal oxide semiconductor (MOS) transistor technology primarily because they are compatible with self-aligned processes. These processes enable gate doping and the formation of the source and drain in a single ion implantation step.

Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. [1]

Sep 4, 2022 · The main difference between the metal gate and the polysilicon gate is the resistive material and sensitivity to temperature.

Nov 19, 2005 · There are a few reasons why polysilicon is preferable to a metal gate: The threshold voltage (and consequently the drain to source on-current) is determined by the work function difference between the gate material and channel material.

In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions.

Polysilicon has many applications in VLSI manufacturing. One of its primary uses is as gate electrode material for MOS devices. A polysilicon gate's electrical conductivity may be increased by depositing a metal (such as tungsten) or a metal …

Jul 12, 2020 · The thin gate oxide under the gate (polysilicon) acts as a mask for the doping process thus preventing further doping under the gate region. Hence, this process makes the gate self-aligned with respect to the source and the drain i.e. the source and drain do not extend under the gate any further resulting in the reduction of Cgd and Cgs value .

The use of polysilicon has many advantages versus the metal gate: -The work function of the gate material can be controlled by the doping of the polysilicon either p-type or an n-type,

Jan 3, 2023 · Why is polysilicon used as gate? Thus, poly-crystalline silicon (polysilicon) became the modern gate material because it is the same chemical composition as the silicon channel beneath the gate oxide.

Thin films of polycrystalline silicon, or polysilicon (also known as poly-Si or poly), are widely used as MOS transistor gate electrodes and for interconnection in MOS circuits. It is also used as resistor, as well as in ensuring ohmic contacts for shallow junctions.