Silicon Carbide CoolSiC™ MOSFET solutions are the next essential step towards an energy-smart world. Based on volume experience and compatibility know-how, Infineon introduces the revolutionary CoolSiC™ MOSFET technology which enables radically new product designs.

Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products from 400 V up to 2000 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers.

Explore how the new CoolSiC™ MOSFET G2 enables a new level of SiC performance, while meeting the highest quality standards in all common combinations of power schemes: AC/DC, DC/DC and DC/AC.

Infineon’s range of CoolSiC™ MOSFET power modules open up new opportunities for inverter designers to realize never-before-seen levels of efficiency and power density. When Silicon Carbide (SiC) semiconductors are used as switches, the overall system efficiency is improved by allowing higher operating temperatures and switching frequencies.

Silicon Carbide trench based MOSFETs are the next step towards and energy-efficient world – representing a dramatic improvement in power conversion systems. Read all about how Infineon controls and assures the reliability of SiC based power semiconductors during the release process to achieve the desired lifetime and quality requirements.

With the innovative OptiMOS™ and StrongIRFET™ low- and medium-voltage power MOSFETs, as well as the revolutionary CoolMOS™ superjunction MOSFET families, Infineon is setting new standards in the industry. CoolSiC™ silicon carbide MOSFET families represent the best performance, reliability, and ease of use for converter designers.

We continuously add SiC-based products - including the revolutionary CoolSiC™ MOSFETs in trench technology - to the already existing Si-assortment. Today the company offers one of the most comprehensive power portfolios in the industry – ranging from ultra …

but may not apply to other power devices and technologies such as IGBTs, silicon carbide (SiC) FETs or gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The focus will be on N-channel enhancement mode devices, which account …

The benefits of wide bandgap silicon carbide (SiC) semiconductors arise from their higher breakthrough electric field, larger thermal conductivity, higher electron-saturation velocity, and lower intrinsic carrier

Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use.