Overview of FeRAMs: Trends and perspectives - IEEE Xplore
WEBJan 23, 2012 · In this paper, the overview of FeRAMs, the key techniques and technical trends for scaled FeRAMs, and the marketing strategy are presented.
A ferroelectric fin diode for robust non-volatile memory
WEBJan 13, 2024 · The capacitor-type ferroelectric random access memory (FeRAM) shows outstanding endurance of over 10 15 and is now commercially available in a cell structure of one transistor and one...
Self-selective ferroelectric memory realized with semimetalic …
WEBDec 2, 2021 · A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated ...
Ferroelectric random access memory (FRAM) devices
WEBJan 1, 2014 · Ferroelectric memory, including ferroelectric random access memory (FRAM or FeRAM), is non-volatile memory which stores information as a polarization state of the ferroelectric material.
Ferroelectric RAM update and Micron – Blocks and Files
WEBJan 5, 2024 · Micron has revealed a substantial interest in Ferro-electric RAM (FeRAM) technology with a paper presented at the December 2023 IEDM event. This could be its Optane storage-class memory replacement.
Non-volatile memory based on the ferroelectric photovoltaic …
WEBJun 11, 2013 · A ferroelectric random access memory (FeRAM) stores information using the spontaneous polarization of ferroelectric materials. An external voltage pulse can switch the polarization between...
Overview and Scaling Prospect of Ferroelectric Memories
WEBJan 1, 2010 · The chain FeRAM realizes small die with fast operation and achieves large cell signal even in small cell. In this chapter, the overview of significant key FeRAM techniques developed for last two decades, the-state-of-the-art FeRAM technologies, and scaling prospect of FeRAM are introduced.
Ferroelectricity Based Memory Devices: New-Generation of
WEBJun 5, 2023 · FeRAM is the only new memory device with the most mature technology available on the commercial market. It has the advantages of extremely low operating voltage (~ 1 V), ultra-fast erasure speed (~ 100 ns), good radiation resistance, and excellent repeated erasure capability (10 12) [1, 2].
FeRAM - SpringerLink
WEBJan 1, 2009 · About 10 years ago, FeRAM was designed primarily based upon the hysteresis curve at RT, but now we understand that more widely measured characteristics, cf. temperature dependence, time response with read/write voltage, and minor loop are essential especially for designing 1T1C fast FeRAM.
FeRAM (Ferroelectric RAM) : FUJITSU SEMICONDUCTOR MEMORY SOLUTION
WEBOur FeRAM is a non-volatile memory featuring high read/write endurance and fast writing speed, with matured manufacturing experience over 20 years. We propose the “Batteryless solutions” using low-power FeRAM in small package. Click for new I2C-interface 512Kbit FeRAM with 125℃ operation.
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