Chemical mechanical polishing or planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing.

Chemical mechanical polishing (CMP) is a planarization technique that was developed for semiconductor applications in the late 1980s and early 1990s. During this period, the number of metal layers increased dramatically and device topographies began to exhibit features that inhibited conformal deposition and gap fill by photoresist, metal, and ...

Chemical mechanical polishing/planarization (CMP) is a process that removes materials by a combination of chemical and mechanical (or abrasive) actions to achieve highly smooth and planar material surfaces.

This document is intended to introduce the techniques of Chemical Mechanical Polishing (CMP) to the new user so that they may be better prepared to integrate CMP into their process flow.

Polish rate affects by: downforce pressure, pad stiffness, pad surface condition, relative speed between pad and wafer, and slurry type.

CMP (Chemical Mechanical Polishing/Planarization) is a highly precise polishing process. It combines two specific actions. Firstly, the process modifies chemical properties of the substrate by chemical agents. Meanwhile, highly designed abrasive particles are …

May 8, 2024 · Chemical mechanical polishing (CMP) involves a delicate interplay between mechanics and chemistry to achieve a super-flat surface. Here’s a breakdown of the process: Preparation: The wafer or...