Dec 17, 2020 · To accomplish this feat, Micron pioneered a concept called CMOS-under-array, where it stacks the 3D NAND array over the peripheral logic. Others have different approaches. Some develop separate memory array and logic dies, which are situated next to each other.

Micron’s new 232-layer design builds on our successful and proven CMOS under array (CuA) architecture that provides a scale-up approach for capacity growth, density, performance, and cost improvements.

With the minimum half-pitch going below 20nm, transition to a 3D NAND cell is required to continue the scaling. This paper describes a floating gate based 3D NAND technology with superior cell characteristics relative to 2D NAND, and …

Periphery circuitry and page buffers are placed under the array using 5th-generation CMOS under array (CuA) technology. To improve random read performance, a faster read is provided with a read concurrency feature: allowing four independent multiplane page read addresses.

Systems and methods for reducing the area and improving the performance of a non-volatile memory array are described. The non-volatile memory array may comprise a 3D NAND memory array that...

Dec 18, 2021 · CMOS under array (CuA) enabled the die size reduction and performance improvements. Program and erase schemes to address the technology challenges such as short-term data retention of the charge-trap cell and the large block size are being investigated.

Apr 1, 2023 · Continuous scaling the 3D NAND technology from CMOS Near Array (CNA) to CMOS Under Array (CUA) can achieve a minimal cell footprint and die size.

This paper describes 4 bits/cell (QLC) 3D NAND based on 96 layer Floating Gate (FG) cell and CMOS under Array (CuA), achieving high areal density, performance, and reliability.

Abstract—This paper describes 4 bits/cell (QLC) 3D NAND based on 96 layer Floating Gate (FG) cell and CMOS under Array (CuA), achieving high areal density, performance, and reliability.

Mar 14, 2024 · We have developed a new CMOS directly bonded to array(CBA) technology based on Cu direct bonding process and applied it to BiCS FLASH™ generation 8 to improve PPAC of 3D flash memory compared to the conventional technology.