C5200 Datasheet PDF – 230V, 15A, NPN Transistor, 2SC5200
Nov 3, 2022 · Description. This is NPN Transistor with a collector to emitter voltage of 230V and collector current of 30A. Features. 1. High breakdown voltage: VCEO= 230 V (min) 2. Complementary to 2SA1943. 3. Suitable for use in 100-W high fidelity audio amplifier’s output stage. C5200 Pinout. Maximum Ratings (Tc = 25°C) 1.
Jan 7, 2016 · TOSHIBA. ―. 2-21F1A. Weight: 9.75 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
High-Fidelity Audio Output Amplifier. General Purpose Power Amplifier . Features. High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz. High Voltage : VCEO=250V. Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1943/FJL4215.
2SC5200 - Toshiba Electronic Devices & Storage Corporation
Bipolar Transistors, NPN Bipolar Transistor, 230 V, 15 A, TO-3P (L)｜Find data sheet and product information.
2SC5200 Datasheet, Equivalent, Cross Reference Search
Transistor Catalog. 2SC5200 Datasheet, Equivalent, Cross Reference Search. Type Designator: 2SC5200 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 150 W Maximum Collector-Base Voltage |Vcb|: 250 V Maximum Collector-Emitter Voltage |Vce|: 250 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current ...
Power Amplifier Circuit Diagram using C5200 A1943 - TRONICSpro
Aug 11, 2023 · The C5200 is a silicon NPN power transistor that operates at a maximum voltage of 230V and dissipates up to 150W. It has a collector current (Ic) rating of 15A, making it suitable for high-power applications. The transistor is housed in a TO-264 package, which ensures efficient heat dissipation.
2SC5200 Transistor Basics- Pinout, Datasheet & Equivalent
Mar 21, 2024 · 2SC5200 is a popular NPN Power transistor used in Audio frequency amplifiers and High power audio circuits. It is called a Power transistor due to its high Collector to Emitter breakdown voltage of 230V, high collector current of 15A, and high current gain of 160.
- Some results have been removed