Avalanche photodiodes (APDs) constitute an important example of a class of optoelectronic devices, called photodetectors, which convert infrared and visible-light energy into measurable electric currents. APDs are widely used as photodetectors in many high-speed optical receivers, including those deployed in current 10-Gb/s/channel lightwave ...

Mar 1, 2024 · In 2009, Dixon reported InGaAs avalanche photodiodes with a gate-controlled Geiger mode at 1.036 GHz and a dead time of only 1.93 ns. In the same year, InGaAs/InP APDs achieved short gate pulses and optimized self-differencing circuits at the 1550 nm communication band, significantly enhancing the APD performance [115]. Widely employed in ...

Jan 1, 1977 · This exploration should first be directed toward finding a semiconductor with the appropriate energy gap that has a large asymmetry of the electron and hole ionization coefficients. Only after this is done should additional effort in materials and device technology, which are necessary to obtain high performance avalanche photodiodes, be ...

Nov 1, 2006 · Avalanche photodiodes (APDs) have internal gain which improves the signal to noise ratio but still some 20 photons are needed for a detectable light pulse. The excess noise factor, the fluctuation of the avalanche multiplication, limits the useful range of the gain. CMS is the first big experiment that uses avalanche photodiodes.

Jan 1, 1985 · This chapter discusses the avalanche photodiodes (APDs) and important developments in these systems. The microscopic foundations of the physics of APDs are discussed and the important role of ionization threshold energies is analyzed, along with developments in the theory of impact ionization, in the chapter.

Mar 1, 2022 · Research on avalanche photodiodes (APDs) began in the 1950s 2., 3..Its pioneer, Jun-ichi Nishizawa, might not have thought that the semiconductor device based on internal current gain generated by impact ionization in the depletion layer could be used to …

Feb 1, 2025 · AlGaN-based avalanche photodiodes (APDs) offer distinct advantages over traditional photomultiplier tubes (PMTs), including compactness, portability, and low energy consumption [4, 5]. These attributes have propelled their widespread adoption in various applications such as missile warning systems, UV communication, biochemical analysis, …

Oct 1, 1985 · Scintillation detection using avalanche photodiodes Introduction There is currently considerable interest in the develop- ment of new solid-state devices to replace PMTs in scintillation detection applications where size, geometri- cal matching, insensitivity to magnetic fields, and/or simpler biasing requirements offer distinct advantages.

Mar 1, 2025 · Avalanche photodiodes (APDs) are widely utilized in high-bit-rate long-distance optical fiber communication systems owing to their internal gain. This study employs the finite element method to simulate an InGaAs/InAlAs APD with a hybrid absorption layer, analyzing the effects of both the field control and absorption layers on performance.

Sep 1, 2019 · The photodiodes are fabricated from single, binary, ternary or quaternary compounds like Silicon (Si), Gallium Arsenide (GaAs), Indium Gallium Arsenide (InGaAs) and Indium Gallium Arsenide Phosphide (InGaAsP) respectively. Silicon Avalanche photodiodes (Si APDs) are the preferred when high speed and low optical power detection are crucially needed.