In this paper we present and characterize a NIST-traceable, all-silicon, 100 nm pitch structure with the necessary quality attributes to calibrate CD-SEM tools used for metrology of sub-0.25 m semiconductor process technology.
Scanning Electron Microscopy (SEM) - SERC
Areas ranging from approximately 1 cm to 5 microns in width can be imaged in a scanning mode using conventional SEM techniques (magnification ranging from 20X to approximately 30,000X, spatial resolution of 50 to 100 nm).
A Note on Magnification | JEOL Resources
The SEM images of hematite from two different SEM manufacturers below illustrate this point. The left image is from a JEOL SEM and has a magnification labeled as 75,000 X with a 100 nm micron bar.
We report on investigations including calibration of a 100 nm pitch structure, the NanoLattice by VLSI Standards [1], with a special metrological scanning electron microscope (SEM) and a scanning force microscope (SFM).
NIST-Traceable Calibration of CD-SEM Magnification Using a 100 nm Pitch Standard. M. Tortonese, Y. Guan, J. Prochazka VLSI Standards, Inc., 3087 North First Street, San Jose, CA 95134. ABSTRACT. This paper is a practical guide to the calibration of magnification of a CD-SEM using a pitch standard.
OVERVIEW: With the semiconductor device manufacturing industry moving to the 100-nm node era, CD-SEMs (critical-dimension scanning electron microscopes) need to have further improved CD measurement reproducibility as well as observation performance.
Critical Dimension Magnification Standard - Ted Pella
NEW Pelcotec™ CDMS-XY-0.1C-ISO. Certified to a NIST standard in an ISO 17205:2017 accredited calibration lab with features from 2mm to 100nm for magnification 10x-200,000x for SEM, FE-SEM and FIB. Feature sizes: 2mm, 1mm, 0.5mm, 0.1mm, 50µm 10µm, 5µm, 2µm, 1µm, 500nm, 250nm, and 100nm.
SEM Magnification Calibration and Verification: Building
Nov 1, 2018 · We walk you through steps to calibrate a scanning electron microscope so you are sure sample measurements from your SEM images are accurate.
Focused Ion Beam | Multi Beam System - JEOL USA
Focused Ion Beam (FIB) is used to prepare very thin – typically 100nm or less - samples for the Transmission Electron Microscope. JEOL’s FIB-SEM combines sample preparation with high resolution Scanning Electron Microscopy imaging at nanometer-scale resolution, making it possible for the exact region of interest, such as a grain boundary or ...
Scanning Electron Microscopy | Materials Science | NREL
NREL uses field-emission scanning electron microscopy (SEM) to analyze the morphology/microstructure of materials with high-spatial resolution up to 1.2 nanometers. How It Works. With basic SEM, a beam of highly energetic (0.1 …
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