The exterior layers of the transistor are known as the "drain" and "source," with the central layer being referred to as the "gate". The function of the transistor is to utilize the voltage applied to ...

These are analogous to the terminals on a bipolar transistor, in that the source fulfills a similar role to the emitter, the gate to the base, and the drain to the collector. Thus the three basic ...

It says something about your career at a company that makes hundreds of trillions of transistors every day when your nickname ...

They’re all field-effect transistors, however ... load switching and wire it up the wrong way by mixing up source and drain, your device will always be powered through the body diode, no ...

A type of 3D FinFET transistor from Intel introduced in 2011 with its Ivy Bridge microarchitecture. The Tri-Gate design is considered 3D because the gate wraps around a raised source-to-drain ...

Strengths of the double-heterostructure devices, made by engineers at Nanyang Technical University, A*STAR, the Singapore-MIT ...

Many people giving talks had complained about the current germanium transistors -- they had a bad habit of not working at high temperatures. Silicon, since it's right above germanium on the ...

Historically, the feature size referred to the length of the silicon channel between source and drain in field-effect transistors (see FET). Today, the feature size is typically the smallest ...

Until earlier this decade, the scaling and performance trends of the logic transistor were mainly the result of SiO 2 gate oxide scaling as well as source–drain junction and well engineering.