Since the early 1970s, scientists have been promoting gallium arsenide as a faster, more efficient substrate material than silicon for making integrated-circuit chips. However, the vast majority of ...

DIFFUSION of cadmium-115 into gallium arsenide has been examined by a method identical to that described by us 1 in the case of zinc-65. The cadmium was diffused from a saturated vapour into a ...

Furthermore, the growth of the laser material ... a material with crystal-lattice dimensions that match those of gallium arsenide. The resulting device is a long structure with an approximately ...

In 2001, Motorola developed a technique that places a spongy layer between gallium arsenide and silicon on the same wafer. Combining these two materials yields a higher-speed product at a lower cost.

Researchers at the US Department of Energy's National Renewable Energy Laboratory have fabricated a III-V gallium arsenide (GaAs ... for III–V epitaxial growth substrates with recovery and ...

An international research group has utilized a new porosification technique to build gallium arsenide (GaAs ... of the porous structure with the MOCVD growth technique, which they claimed ...