Popular semiconductor materials for multi-junction cells include indium gallium phosphide (InGaP), gallium arsenide (GaAs ... solar cell layer. Each layer has a different band gap, with the ...

Researchers at the US Department of Energy's National Renewable Energy Laboratory have fabricated a III-V gallium arsenide (GaAs) solar cell based on a substrate made of spalled GaAs. The cost of ...

A research team from Germany's Fraunhofer ISE and France's Centre for Nanoscience and Nanotechnology (C2N) claim to have developed an ultra-thin solar cell based on Gallium arsenide (GaAs), which ...

These quantum dots possess a high absorption coefficient and a suitable band gap. Additionally ... Results displayed that GaSb/GaAs quantum dots improved the solar cell performance, with a ...

Heterojunctions are interfaces formed between two dissimilar semiconductor materials with different band gaps, electron affinities, or work functions. These nanoscale junctions play a crucial role in ...